A STUDY OF DIELECTRIC BREAKDOWN MECHANISM IN COFEB/MGO/COFEB MAGNETIC TUNNEL JUNCTION

被引：39
|
作者：
Yoshida, Chikako [1 ]
Kurasawa, Masaki [1 ]
Lee, Young Min [1 ]
Tsunoda, Koji [1 ]
Aoki, Masaki [1 ]
Sugiyama, Yoshihiro [1 ]
机构：
[1] Fujitsu Labs Ltd, Syst LSI Dev Labs, Atsugi, Kanagawa 2430197, Japan
来源：
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年
关键词：
MTJ; MgO barrier; TDDB; C-AFM; MODEL;
D O I：
10.1109/IRPS.2009.5173239
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
We examined the breakdown characteristics of a 1-nm-thick MgO barrier by measuring the time dependent dielectric breakdown (TDDB) and conducting atomic force microscopy (C-AFM) observation. We found that two different local conduction modes, the percolation path and Fowler-Nordheim (F-N) tunneling, contribute to dielectric breakdown. Furthermore, the operating voltage of magnetic tunnel junctions (MTJs) for maintaining reliability over ten years against dielectric breakdown was discussed.
引用
收藏
页码：139 / 142
页数：4
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