Ferromagnetic resonance and damping properties of CoFeB thin films as free layers in MgO-based magnetic tunnel junctions

被引：189

作者：

Liu, Xiaoyong ^{[1
]}

Zhang, Wenzhe ^{[2
]}

Carter, Matthew J. ^{[3
]}

Xiao, Gang ^{[2
]}

机构：

[1] NIST, Gaithersburg, MD 20899 USA

[2] Brown Univ, Dept Phys, Providence, RI 02912 USA

[3] Micro Magnet Inc, Fall River, MA 02720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 03期

基金：

美国国家科学基金会;

关键词：

LINEWIDTH;

D O I：

10.1063/1.3615961

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the magnetization dynamics of sputtered Co40Fe40B20 thin films in a wide range of thicknesses used as free layers in MgO-based magnetic tunnel junctions, with the technique of broadband ferromagnetic resonance (FMR). We have observed a large interface-induced magnetic perpendicular anisotropy in the thin film limit. The out-of-plane angular dependence of the FMR measurement revealed the contributions of two different damping mechanisms in thick and thin film limits. In thinner films (< 2 nm), two-magnon scattering and inhomogeneous broadening are significant for the FMR linewidth, while the Gilbert damping dominates the linewidth in thicker films (>= 4 nm). Lastly, we have observed an inverse scaling of Gilbert damping constant with film thickness, and an intrinsic damping constant of 0.004 in the CoFeB alloy film is determined. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3615961]

引用

页数：5

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