Superparamagnetism in MgO-based magnetic tunnel junctions with a thin pinned ferromagnetic electrode

被引：18
|
作者：
Feng, J. F. [1 ,2 ,3 ]
Chen, J. Y. [1 ,2 ,3 ]
Venkatesan, M. [1 ,2 ]
Feng, G. [1 ,2 ]
Han, X. F. [3 ]
Coey, J. M. D. [1 ,2 ]
机构：
[1] Trinity Coll Dublin, Sch Phys, Dublin, Ireland
[2] Trinity Coll Dublin, CRANN, Dublin, Ireland
[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
PHYSICAL REVIEW B | 2010年 / 81卷 / 20期
基金：
爱尔兰科学基金会;
关键词：
SPIN-FLIP SCATTERING; ROOM-TEMPERATURE; MAGNETORESISTANCE; FILMS;
D O I：
10.1103/PhysRevB.81.205212
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
MgO-based magnetic tunnel junctions have been fabricated with a thin Co40Fe40B20 (CoFeB) layer in the pinned synthetic antiferromagnetic CoFe/Ru/CoFeB stack. An inverted tunneling magnetoresistance is observed due to the unbalanced synthetic antiferromagnet. Superparamagnetic nanoparticles form when the CoFeB layer is thinner than 1.5 nm, and an abnormal temperature dependence of the junction resistance is associated with superparamagnetism when the thermal fluctuation energy exceeds the magnetic anisotropy energy. This explanation accounts for the temperature dependence of the tunneling magnetoresistance effect.
引用
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页数：5
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