Noise of MgO-based magnetic tunnel junctions

被引：15

作者：

Polovy, H. ^{[1
]}

Guerrero, R. ^{[1
]}

Scola, J. ^{[2
]}

Pannetier-Lecoeur, M. ^{[1
]}

Fermon, C. ^{[1
]}

Feng, G. ^{[3
,4
]}

Fahy, K. ^{[3
,4
]}

Cardoso, S. ^{[5
]}

Almeida, J. ^{[5
]}

Freitas, P. P. ^{[5
]}

机构：

[1] CEA Saclay, DSM, IRAMIS, SPEC, F-91191 Gif Sur Yvette, France

[2] Univ Versailles St Quentin, GEMaC, F-78035 Versailles, France

[3] Trinity Coll Dublin, CRANN, Dublin 2, Ireland

[4] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland

[5] INESC Microsyst & Nanotechnol, P-1000029 Lisbon, Portugal

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2010年 / 322卷 / 9-12期

关键词：

TMR; Low-frequency noise; Magnetic sensor; Coercivity;

D O I：

10.1016/j.jmmm.2009.05.060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. We present here the noise for different degrees of crystallization and CoFeB/MgO interface quality depending on the annealing temperature. For optimized annealing temperature, an extremely low 1/f noise, compared to magnetic junctions with Al2O3 barriers, has been observed. The origin of the low-frequency noise can be explained in terms of localized charge traps with the MgO barriers. Results for very thin CoFeB are presented in the second part as a function of temperature. Despite the absence of coercivity at room temperature for thinner free-layer structures, an important increase of H-c appears under 180 K. Meanwhile, the random telegraph noise present at room temperature is suppressed due to magnetic domains freezing. These results are discussed in view of various sensors applications of MgO-MTJ, giving advantages and drawbacks in terms of signal-to-noise ratio with respect to the operating temperature. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：1624 / 1627

页数：4

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