Reliability of Cu Pillar on Substrate Interconnects in High Performance Flip Chip Packages

被引:0
|
作者
Katkar, Rajesh [1 ]
Huynh, Michael [1 ]
Mirkarimi, Laura [1 ]
机构
[1] Tessera Inc, San Jose, CA 95134 USA
来源
2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2011年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, we compare the reliability performance of Cu pillar-on-substrate interconnects against Cu pillar-on-die and conventional thin-Cu-UBM with solder-on-substrate-pad (SOP) interconnects within fine pitch Pb-free flip chip packages. Our ongoing results indicate a superior electromigration (EM) lifetime for pillar-on-substrate structures compared to thin-Cu-UBM interconnects. While the primary failure mechanism, the formation of voids and the depletion of the UBM in the cathode bumps, remains similar in both the interconnect structures, severe damage to the substrate side is observed only within the SOP structures. Moreover, the pillar-on-substrate interconnects show enhanced temperature cycling performance compared to pillar-on-die interconnects with 50% performance improvement at 1% failure rate.
引用
收藏
页码:965 / 970
页数:6
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