A generalized SiGe HBT single-event effects model for on-orbit event rate calculations

被引：26

作者：

Pellish, Jonathan A. ^{[1
]}

Reed, Robert A. ^{[1
]}

Sutton, Akil K. ^{[2
]}

Weller, Robert A. ^{[1
]}

Carts, Martin A. ^{[3
]}

Marshall, Paul W. ^{[4
]}

Marshall, Cheryl J. ^{[3
]}

Krithivasan, Ramkumar ^{[2
]}

Cressler, John D. ^{[2
]}

Mendenhall, Marcus H. ^{[5
]}

Schrimpf, Ronald D. ^{[1
]}

Warren, Kevin M. ^{[5
]}

Sierawski, Brian D. ^{[5
]}

Niu, Guofu F. ^{[6
]}

机构：

[1] Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[4] NASA, Brookneal, VA 24528 USA

[5] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37235 USA

[6] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

deep trench isolation; Geant4; geosynchronous orbit; low-earth orbit; rate prediction; silicon-germanium HBT; single-event upset;

D O I：

10.1109/TNS.2007.909987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits fabricated in the IBM 5AM SiGe BiCMOS process. Calibrating to heavy ion data was sufficient to reproduce the proton data without further adjustment. The validated model is used to calculate upset event rates for low-earth and geosynchronous orbits under typical conditions.

引用

页码：2322 / 2329

页数：8

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