A generalized SiGe HBT single-event effects model for on-orbit event rate calculations

被引：26

作者：

Pellish, Jonathan A. ^{[1
]}

Reed, Robert A. ^{[1
]}

Sutton, Akil K. ^{[2
]}

Weller, Robert A. ^{[1
]}

Carts, Martin A. ^{[3
]}

Marshall, Paul W. ^{[4
]}

Marshall, Cheryl J. ^{[3
]}

Krithivasan, Ramkumar ^{[2
]}

Cressler, John D. ^{[2
]}

Mendenhall, Marcus H. ^{[5
]}

Schrimpf, Ronald D. ^{[1
]}

Warren, Kevin M. ^{[5
]}

Sierawski, Brian D. ^{[5
]}

Niu, Guofu F. ^{[6
]}

机构：

[1] Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA

[4] NASA, Brookneal, VA 24528 USA

[5] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37235 USA

[6] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

deep trench isolation; Geant4; geosynchronous orbit; low-earth orbit; rate prediction; silicon-germanium HBT; single-event upset;

D O I：

10.1109/TNS.2007.909987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits fabricated in the IBM 5AM SiGe BiCMOS process. Calibrating to heavy ion data was sufficient to reproduce the proton data without further adjustment. The validated model is used to calculate upset event rates for low-earth and geosynchronous orbits under typical conditions.

引用

页码：2322 / 2329

页数：8

共 50 条

[41] Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology
Zeinolabedinzadeh, Saeed
Ulusoy, Ahmet C.
Inanlou, Farzad
Ying, Hanbin
Gong, Yunyi
Fleetwood, Zachary E.
Roche, Nicolas J. -H.
Khachatrian, Ani
McMorrow, Dale
Buchner, Stephen P.
Warner, Jeffrey H.
Paki-Amouzou, Pauline
Cressler, John D.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 536 - 543
[42] Accurate Modeling of Single-Event Transients in a SiGe Voltage Reference Circuit
Moen, Kurt A.
Najafizadeh, Laleh
Seungwoo, Jung
Raman, Ashok
Turowski, Marek
Cressler, John D.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (03) : 877 - 884
[43] The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
Lourenco, Nelson E.
Fleetwood, Zachary E.
Ildefonso, Adrian
Wachter, Mason T.
Roche, Nicolas J. -H.
Khachatrian, Ani
McMorrow, Dale
Buchner, Stephen P.
Warner, Jeffrey H.
Itsuji, Hiroaki
Kobayashi, Daisuke
Hirose, Kazuyuki
Paki, Pauline
Raman, Ashok
Cressler, John D.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 406 - 414
[44] GENERAL UPPER BOUND ON SINGLE-EVENT UPSET RATE
CHLOUBER, D
ONEILL, P
POLLOCK, J
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (02) : 1065 - 1071
[45] MODEL FOR CMOS/SOI SINGLE-EVENT VULNERABILITY
KERNS, SE
MASSENGILL, LW
KERNS, DV
ALLES, ML
HOUSTON, TW
LU, H
HITE, LR
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) : 2305 - 2310
[46] Development of facilities for investigating single-event effects
Nashiyama, I
Hirao, T
Itoh, H
Kamiya, T
Naito, I
Matsuda, S
RADECS 95 - THIRD EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1996, : 94 - 100
[47] Improved model for single-event burnout mechanism
Kuboyama, S
Ikeda, N
Hirao, T
Matsuda, S
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3336 - 3341
[48] Single-event effects in SOI technologies and devices
Musseau, O
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) : 603 - 613
[49] Single-Event Effects in CMOS Image Sensors
Lalucaa, Valerian
Goiffon, Vincent
Magnan, Pierre
Rolland, Guy
Petit, Sophie
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (04) : 2494 - 2502
[50] Single-Event effects rate prediction (vol 43, pg 483, 1996)
Pickel, JC
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (04) : 2454 - 2454

← 1 2 3 4 5 →