Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system

被引：6

作者：

Prazmowska, J. ^{[1
]}

Korbutowlez, R. ^{[1
]}

Paszkiewicz, R. ^{[1
]}

Szyszka, A. ^{[1
]}

Serafinczuk, J. ^{[1
]}

Podhorodecki, A. ^{[2
]}

Misiewicz, J. ^{[2
]}

Tlaczala, M. ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

来源：

VACUUM | 2008年 / 82卷 / 10期

关键词：

HVPE; nucleation layer; thick GaN layer; GaN; LT GaN;

D O I：

10.1016/j.vacuum.2008.01.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of deposition conditions of nucleation GaN layer on the properties of high-temperature GaN layer, grown on sapphire substrates, was investigated. The hydride vapor phase epitaxy (HVPE) three-section horizontal hot-wall furnace technique was applied. Various temperatures, HCl flows and time intervals of nucleation layer growth were utilized. Based on previous studies the following experimental conditions were selected: temperature was kept at 450 or 570 degrees C, and HCl flows were 8 or 10 sccm/min. The duration of nucleation layer deposition was 5, 7 and 9 min. The scanning electron microscopy technique was applied for the investigation of nucleation layer morphology after migration. Thick GaN layers were deposited during the three-step growth process at 1060 degrees C. Samples with various surface morphologies were obtained. Photoluminescence spectra and X-ray measurements were performed, which permitted clarifications of the influence of growth conditions of the nucleation layer on the properties of high-temperature layers. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：988 / 993

页数：6

共 50 条

[21] Growth optimization for thick crack-free GaN layers on sapphire with HVPE
Richter, E
Hennig, C
Kissel, H
Sonia, G
Zeimer, U
Weyers, M
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2099 - 2103
[22] Influence of AlN nucleation layer growth conditions on quality of GaN layers deposited on (0001) sapphire
Gonsalves, M
Kim, W
Narayanan, V
Mahajan, S
JOURNAL OF CRYSTAL GROWTH, 2002, 240 (3-4) : 347 - 354
[23] Imposed layer-by-layer growth of ZnO on GaN/sapphire substrates using pulsed laser interval deposition
Hirsch, Alexander
Wille, Christian
Bremers, Heiko
Rossow, Uwe
Hangleiter, Andreas
Ludwig, Frank
Schilling, Meinhard
THIN SOLID FILMS, 2011, 519 (22) : 7683 - 7685
[24] Sapphire substrate misorientation effects on GaN nucleation layer properties
Lu, D
Florescu, DI
Lee, DS
Merai, V
Ramer, JC
Parekh, A
Armour, EA
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 353 - 359
[25] Nucleation mechanism of GaN growth on wet etched pattern sapphire substrates
Sun, Yongjian
Yu, Tongjun
Dai, Jinhong
Wang, Nonghua
Luo, Ruihong
Liang, Zhiwen
Zhang, Neng
Li, Chengyang
Kang, Xiangning
Zhang, Guoyi
CRYSTENGCOMM, 2014, 16 (24): : 5458 - 5465
[26] InGaN double-heterostructures and DH-LEDs on HVPE GaN-on-sapphire substrates
Boutros, KS
Flynn, JS
Phanse, V
Vaudo, RP
Smith, GM
Redwing, JM
Tolliver, TR
Anderson, NG
NITRIDE SEMICONDUCTORS, 1998, 482 : 1047 - 1052
[27] The role of trimethylgallium flow during nucleation layer deposition in the optimization of epitaxial GaN films
Wei, CH
Edgar, JH
Ignatiev, C
Chaudhuri, J
THIN SOLID FILMS, 2000, 360 (1-2) : 34 - 38
[28] Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique
Zhang, X
Li, RR
Dapkus, PD
Rich, DH
APPLIED PHYSICS LETTERS, 2000, 77 (14) : 2213 - 2215
[29] Influence of AlN Buffer Layer Deposition Temperature on Properties of GaN HVPE Layers
Prazmowska, J.
Korbutowicz, R.
Wosko, M.
Paszkiewicz, R.
Kovac, J.
Srnanek, R.
Tlaczala, M.
ACTA PHYSICA POLONICA A, 2009, 116 : S123 - S125
[30] Dependence of polarity and crystal quality of the HVPE GaN buffer layers on the surface treatment of substrates (GaAs and sapphire)
Sato, T
Namerikawa, M
Suzuki, M
Souda, R
Hasegawa, F
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 338 - 341

← 1 2 3 4 5 →