Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system

被引：6

作者：

Prazmowska, J. ^{[1
]}

Korbutowlez, R. ^{[1
]}

Paszkiewicz, R. ^{[1
]}

Szyszka, A. ^{[1
]}

Serafinczuk, J. ^{[1
]}

Podhorodecki, A. ^{[2
]}

Misiewicz, J. ^{[2
]}

Tlaczala, M. ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

来源：

VACUUM | 2008年 / 82卷 / 10期

关键词：

HVPE; nucleation layer; thick GaN layer; GaN; LT GaN;

D O I：

10.1016/j.vacuum.2008.01.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of deposition conditions of nucleation GaN layer on the properties of high-temperature GaN layer, grown on sapphire substrates, was investigated. The hydride vapor phase epitaxy (HVPE) three-section horizontal hot-wall furnace technique was applied. Various temperatures, HCl flows and time intervals of nucleation layer growth were utilized. Based on previous studies the following experimental conditions were selected: temperature was kept at 450 or 570 degrees C, and HCl flows were 8 or 10 sccm/min. The duration of nucleation layer deposition was 5, 7 and 9 min. The scanning electron microscopy technique was applied for the investigation of nucleation layer morphology after migration. Thick GaN layers were deposited during the three-step growth process at 1060 degrees C. Samples with various surface morphologies were obtained. Photoluminescence spectra and X-ray measurements were performed, which permitted clarifications of the influence of growth conditions of the nucleation layer on the properties of high-temperature layers. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：988 / 993

页数：6

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