Influence of AlN Buffer Layer Deposition Temperature on Properties of GaN HVPE Layers

被引：0
|
作者：
Prazmowska, J. [1 ]
Korbutowicz, R. [1 ]
Wosko, M. [1 ]
Paszkiewicz, R. [1 ]
Kovac, J. [2 ,3 ]
Srnanek, R. [3 ]
Tlaczala, M. [1 ]
机构：
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
[2] Slovak Tech Univ Bratislava, Microelect Dept, Fac Elect Engn & Informat Technol, Bratislava 81219, Slovakia
[3] Ctr Int Laser, Bratislava 81219, Slovakia
来源：
ACTA PHYSICA POLONICA A | 2009年 / 116卷
关键词：
SAPPHIRE; RAMAN; STRAIN; FILMS;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al(2)O(3). Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.
引用
收藏
页码：S123 / S125
页数：3
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