Influence of AlN Buffer Layer Deposition Temperature on Properties of GaN HVPE Layers

被引：0

作者：

Prazmowska, J. ^{[1
]}

Korbutowicz, R. ^{[1
]}

Wosko, M. ^{[1
]}

Paszkiewicz, R. ^{[1
]}

Kovac, J. ^{[2
,3
]}

Srnanek, R. ^{[3
]}

Tlaczala, M. ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

[2] Slovak Tech Univ Bratislava, Microelect Dept, Fac Elect Engn & Informat Technol, Bratislava 81219, Slovakia

[3] Ctr Int Laser, Bratislava 81219, Slovakia

来源：

ACTA PHYSICA POLONICA A | 2009年 / 116卷

关键词：

SAPPHIRE; RAMAN; STRAIN; FILMS;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Gallium nitride layers were deposited on AlN and double layer (AlN/AlGaN) buffers grown at various temperatures on Al(2)O(3). Stress in layers was evaluated based on the Raman scattering and photoluminescence measurements. The obtained values were less than 1 GPa.

引用

页码：S123 / S125

页数：3

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