The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

被引：0
|
作者：
Li, Yangfeng [1 ,2 ]
Hu, Xiaotao [1 ,2 ]
Song, Yimeng [4 ]
Su, Zhaole [1 ,2 ]
Jia, Haiqiang [1 ,2 ,3 ]
Wang, Wenxin [1 ,2 ,3 ]
Jiang, Yang [1 ,2 ]
Chen, Hong [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Key Lab Renewable Energy,Beijing Natl Lab Condens, Beijing Key Lab New Energy Mat & Devices, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat & Optoelect Engn, Beijing 100049, Peoples R China
[3] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
[4] Univ Sci & Technol Beijing, Sch Math & Phys, Beijing Key Lab Magneto Photoelect Composite & In, Beijing 100083, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2022年 / 141卷
基金：
中国国家自然科学基金;
关键词：
N-polar GaN; MOCVD; Nitridation; AlN buffer Layer; GROWTH;
D O I：
10.1016/j.mssp.2021.106423
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of temperature of nitridation and AlN buffer layer growth on N-polar gallium nitride (GaN) grown on 2-in. vicinal sapphire substrate by metal organic chemical vapour deposition (MOCVD) is investigated in this study. A medium temperature (1000 ?) leads to a relatively rougher surface but improved crystalline quality, enhanced optical performance, and higher electron mobility. The relatively stronger yellow luminescence and weaker near-band-edge (NBE) emission of the N-polar GaN undergoing a high temperature (1110 ?) nitridation and AlN buffer layer growth may be attributed to the increase of gallium vacancies, which is further confirmed by the relatively lower electron concentration. The sublinear excitation power dependence of the NBE emission may refer to the trion emission formed by the defect-bounded excitons.
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页数：8
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