The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

被引：9
|
作者：
Li, Yangfeng [1 ,2 ]
Hu, Xiaotao [1 ,2 ]
Song, Yimeng [4 ]
Su, Zhaole [1 ,2 ]
Jia, Haiqiang [1 ,2 ,3 ]
Wang, Wenxin [1 ,2 ,3 ]
Jiang, Yang [1 ,2 ]
Chen, Hong [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Key Lab Renewable Energy,Beijing Natl Lab Condens, Beijing Key Lab New Energy Mat & Devices, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat & Optoelect Engn, Beijing 100049, Peoples R China
[3] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
[4] Univ Sci & Technol Beijing, Sch Math & Phys, Beijing Key Lab Magneto Photoelect Composite & In, Beijing 100083, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2022年 / 141卷
基金：
中国国家自然科学基金;
关键词：
N-polar GaN; MOCVD; Nitridation; AlN buffer Layer; GROWTH;
D O I：
10.1016/j.mssp.2021.106423
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of temperature of nitridation and AlN buffer layer growth on N-polar gallium nitride (GaN) grown on 2-in. vicinal sapphire substrate by metal organic chemical vapour deposition (MOCVD) is investigated in this study. A medium temperature (1000 ?) leads to a relatively rougher surface but improved crystalline quality, enhanced optical performance, and higher electron mobility. The relatively stronger yellow luminescence and weaker near-band-edge (NBE) emission of the N-polar GaN undergoing a high temperature (1110 ?) nitridation and AlN buffer layer growth may be attributed to the increase of gallium vacancies, which is further confirmed by the relatively lower electron concentration. The sublinear excitation power dependence of the NBE emission may refer to the trion emission formed by the defect-bounded excitons.
引用
收藏
页数：8
相关论文
共 50 条
  • [1] The influence of temperature of nitridation and AlN buffer layer on N-polar GaN
    Li, Yangfeng
    Hu, Xiaotao
    Song, Yimeng
    Su, Zhaole
    Jia, Haiqiang
    Wang, Wenxin
    Jiang, Yang
    Chen, Hong
    Materials Science in Semiconductor Processing, 2022, 141
  • [2] Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate
    Wang Guang-Xu
    Chen Peng
    Liu Jun-Lin
    Wu Xiao-Ming
    Mo Chun-Lan
    Quan Zhi-Jue
    Jiang Feng-Yi
    ACTA PHYSICA SINICA, 2016, 65 (08)
  • [3] N-polar GaN/AlN resonant tunneling diodes
    Cho, YongJin
    Encomendero, Jimy
    Ho, Shao-Ting
    Xing, Huili Grace
    Jena, Debdeep
    APPLIED PHYSICS LETTERS, 2020, 117 (14)
  • [4] Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET
    Zazuli, Aina Hiyama
    Kowaki, Taketo
    Miyamoto, Minagi
    Hanasaku, Koki
    Inahara, Daisuke
    Fujii, Kai
    Kimoto, Taisei
    Ninoki, Ryosuke
    Kurai, Satoshi
    Okada, Narihito
    Yamada, Yoichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (09)
  • [5] Effects of substrate nitridation and AlN buffer layer on the properties of GaN on sapphire
    Ito, T
    Teshigawara, H
    Ohtsuka, K
    Kuwahara, K
    Sumiya, M
    Takano, Y
    Fuke, S
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 178 - 181
  • [6] N-Polar InAlN/AlN/GaN MIS-HEMTs
    Brown, David F.
    Nidhi
    Wu, Feng
    Keller, Stacia
    DenBaars, Steven P.
    Mishra, Umesh K.
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) : 800 - 802
  • [7] The role of AlN thickness in MOCVD growth of N-polar GaN
    Li, Yangfeng
    Hu, Xiaotao
    Song, Yimeng
    Su, Zhaole
    Wang, Wenqi
    Jia, Haiqiang
    Wang, Wenxin
    Jiang, Yang
    Chen, Hong
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 884
  • [8] Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures
    Mazumder, B.
    Wong, M. H.
    Hurni, C. A.
    Zhang, J. Y.
    Mishra, U. K.
    Speck, J. S.
    APPLIED PHYSICS LETTERS, 2012, 101 (09)
  • [9] N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
    Su, Zhaole
    Li, Yangfeng
    Hu, Xiaotao
    Song, Yimeng
    Kong, Rui
    Deng, Zhen
    Ma, Ziguang
    Du, Chunhua
    Wang, Wenxin
    Jia, Haiqiang
    Chen, Hong
    Jiang, Yang
    MATERIALS, 2022, 15 (09)
  • [10] Influence of AlN Buffer Layer Deposition Temperature on Properties of GaN HVPE Layers
    Prazmowska, J.
    Korbutowicz, R.
    Wosko, M.
    Paszkiewicz, R.
    Kovac, J.
    Srnanek, R.
    Tlaczala, M.
    ACTA PHYSICA POLONICA A, 2009, 116 : S123 - S125
12345