Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

被引：13

作者：

Zhang, X

Li, RR

Dapkus, PD ^{[1
]}

Rich, DH

机构：

[1] Univ So Calif, Dept Mat Sci & Engn, Los Angeles, CA 90089 USA

[2] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1312255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A sparse nucleation process on sapphire (0001) substrates has been developed for the growth of GaN thin films. The density of nucleation sites is reduced to only 4x10(4) cm(-2). Based on this process, we performed direct lateral epitaxial overgrowth (LEO) of GaN by metalorganic chemical vapor deposition on patterned SiO2/sapphire (0001) substrates. An aggregate lateral to vertical growth rate ratio of around 2:1 was achieved after the coalescence of the GaN stripes. Cathodoluminescence imaging shows strong and uniform near-band gap luminescence from LEO regions and confirms the improved quality of LEO GaN, which is further supported by atomic force microscopy analysis. (C) 2000 American Institute of Physics. [S0003-6951(00)02039-8].

引用

页码：2213 / 2215

页数：3

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