Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

被引：13
|
作者：
Zhang, X
Li, RR
Dapkus, PD [1 ]
Rich, DH
机构：
[1] Univ So Calif, Dept Mat Sci & Engn, Los Angeles, CA 90089 USA
[2] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期
关键词：
D O I：
10.1063/1.1312255
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A sparse nucleation process on sapphire (0001) substrates has been developed for the growth of GaN thin films. The density of nucleation sites is reduced to only 4x10(4) cm(-2). Based on this process, we performed direct lateral epitaxial overgrowth (LEO) of GaN by metalorganic chemical vapor deposition on patterned SiO2/sapphire (0001) substrates. An aggregate lateral to vertical growth rate ratio of around 2:1 was achieved after the coalescence of the GaN stripes. Cathodoluminescence imaging shows strong and uniform near-band gap luminescence from LEO regions and confirms the improved quality of LEO GaN, which is further supported by atomic force microscopy analysis. (C) 2000 American Institute of Physics. [S0003-6951(00)02039-8].
引用
收藏
页码：2213 / 2215
页数：3
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