Negative luminescence in p-InAsSbP/n-InAs diodes

被引：6
|
作者：
Aidaraliev, M [1 ]
Zotova, NV [1 ]
Karandashev, SA [1 ]
Matveev, BA [1 ]
Remennyi, MA [1 ]
Stus', NM [1 ]
Talalakin, GN [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 03期
关键词：
D O I：
10.1134/1.1356155
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Negative luminescence (NL) at lambda (max) = 3.8 mum from reverse-biased p-InAsSbP/n-InAs diode heterostructures has been studied at temperatures of 70-180 degreesC. The NL power increases with temperature and exceeds the power of direct-bias electroluminescence at temperatures over 110 degreesC. An NL power of 5 mW/cm(2), efficiency of 60%, and a conversion efficiency of 25 mW/(A cm(2)) have been obtained at 160 degreesC. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：321 / 324
页数：4
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