4 μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20-180°C

被引：0
|
作者：
A'daraliev, M [1 ]
Zotova, NV [1 ]
Karandashev, SA [1 ]
Matveev, BA [1 ]
Remenniy, MA [1 ]
Stus, NM [1 ]
Talalakin, GN [1 ]
Malyutenko, VK [1 ]
Malyutenko, OY [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
FIFTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 2001年 / 4355卷
关键词：
InAs; InAsSbP; LPE; LEDs; negative luminescence; 2D infrared imaging;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Negative luminescence (NL) operation at similar to4 mum is reported for p-InAsSbP/n-InAs reverse biased diodes with efficiency of about 60 % (180 degreesC). High NL conversion efficiency (25 mWcm(-2)A(-1), 180 degreesC) and remarkable value of negative apparent temperature (DeltaT approximate to6 degreesC) show advantages of p-InAsSbP/n-InAs NL devices for high temperature applications.
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页码：161 / 167
页数：5
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