The 3×3 matrix based on p-InAsSbP/n-InAs single heterostructure diodes

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机构：
[1] Il'inskaya, N.D.
[2] Karandashev, S.A.
[3] Karpukhina, N.G.
[4] Lavrov, A.A.
[5] Matveev, B.A.
[6] Remennyi, M.A.
[7] Stus, N.M.
[8] Usikova, A.A.
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| 1600年 / Federal Informational-Analytical Center of the Defense Industry卷
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Light emitting diodes - Indium;
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摘要：
We present electroluminescence and photoelectrical properties of 3×3 matrix fabricated from InAsSbP/n-InAs/n+-InAs single heterostructure that is sensitive/emitting in the wavelength range around 3.3 μm at operating temperatures of -20+80 °C. Formation of positive and negative radiation contrast are also considered.
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