Negative luminescence in p-InAsSbP/n-InAs diodes

被引：6

作者：

Aidaraliev, M ^{[1
]}

Zotova, NV ^{[1
]}

Karandashev, SA ^{[1
]}

Matveev, BA ^{[1
]}

Remennyi, MA ^{[1
]}

Stus', NM ^{[1
]}

Talalakin, GN ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 03期

关键词：

D O I：

10.1134/1.1356155

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Negative luminescence (NL) at lambda (max) = 3.8 mum from reverse-biased p-InAsSbP/n-InAs diode heterostructures has been studied at temperatures of 70-180 degreesC. The NL power increases with temperature and exceeds the power of direct-bias electroluminescence at temperatures over 110 degreesC. An NL power of 5 mW/cm(2), efficiency of 60%, and a conversion efficiency of 25 mW/(A cm(2)) have been obtained at 160 degreesC. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：321 / 324

页数：4

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