Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves

被引：5
|
作者：
Takahashi, Tsuyoshi [1 ,2 ]
Kawaguchi, Kenichi [1 ,2 ]
Sato, Masaru [1 ,2 ]
Suhara, Michihiko [3 ]
Okamoto, Naoya [1 ,2 ]
机构：
[1] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
[3] Tokyo Metropolitan Univ, Hachioji, Tokyo 1920397, Japan
来源：
49TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2019) | 2019年
关键词：
nanowire; backward; diode; sensitivity; harvesting; tunneling; MILLIMETER-WAVE DETECTORS; EFFICIENCY; PERFORMANCE;
D O I：
10.1109/essderc.2019.8901802
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Type-II p-GaAs0.6Sb0.4/n-InAs nanowire backward diodes (BWDs) were developed for ambient RF energy harvesting. Vapor-liquid-solid (VLS) growth method was used to grow nanowire segments on a GaAs(111)B substrate. For stable growth, n-GaAs nanowire segments were grown before growing p-GaAs0.6Sb0.4/n-InAs segments. The I-V characteristic of the diodes displayed large nonlinearity under zero bias condition, which is typical of backward diodes. The nanowire BWDs indicated linear detected voltages when a microwave input signal from 0.1 to 10 mu W was applied at 2.4 GHz. The diodes can operate at 2.4 GHz under zero bias. Impedance-matched voltage sensitivity of 370 kV/W was obtained for the nanowire BWDs. The obtained sensitivity value was higher than those of well-designed Schottky barrier diodes (SBDs).
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页码：214 / 217
页数：4
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