The design of CMOS transimpedance amplifier based on BSIM large-signal model

被引：0

作者：

Kuo, CW ^{[1
]}

Hsiao, CC ^{[1
]}

Yang, SC ^{[1
]}

Chan, YJ ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

2001 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behaviors. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated base on this model. A 0.35 mum CMOS technology was used for circuit realization, and a capacitive-peaking [1-3] design to improve the bandwidth of TZ amplifier was also proposed and investigated.

引用

页码：165 / 168

页数：4

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