Accurate large-signal FET model tailored for switching-mode power amplifier design

被引：0
|
作者：
Liu, Lin-Sheng [1 ]
Ma, Jian-Guo [2 ]
Ng, Geok-Ing [3 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China
[2] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China
[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
IEICE ELECTRONICS EXPRESS | 2010年 / 7卷 / 22期
关键词：
power amplifier; switching-mode; GaN HEMT; large-signal model; parameter extraction;
D O I：
10.1587/elex.7.1672
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A large-signal FET model for the simulation and design of switching-mode high-efficiency power amplifiers (PAs) is presented. The proposed nonlinear model is constructed by accurately characterizing the ON and OFF behaviors of the active FET device, along with its parameter extraction associated with the specific regions. The robustness of the model in predicting the switching-mode operation of on-wafer GaN-based HEMTs is demonstrated by experimental results. Moreover, the model has been employed for designing an inverse Class-F PA using a commercial high-power GaN HEMT. Good agreement between amplifier simulation and measurement proves the validity of the proposed large-signal model.
引用
收藏
页码：1672 / 1678
页数：7
相关论文
共 50 条
  • [1] Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
    Jarndal, Anwar
    Aflaki, Pouya
    Degachi, Louay
    Birafane, Ahmed
    Kouki, Ammar
    Negra, Renato
    Ghannouchi, Fadhel M.
    [J]. SOLID-STATE ELECTRONICS, 2010, 54 (07) : 696 - 700
  • [2] Dedicated Large-Signal GaN HEMT Model for Switching-Mode Circuit Analysis and Design
    Aflaki, Pouya
    Negra, Renato
    Ghannouchi, Fadhel M.
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (11) : 740 - 742
  • [3] On the Large-Signal Modeling of AlGaN/GaN HEMTs for RF Switching-Mode Power Amplifiers Design
    Jarndal, Anwar
    Aflaki, Pouya
    Degachi, Louay
    Birafane, Ahmed
    Kouki, Ammar
    Negra, Renato
    Ghannouchi, Fadhel M.
    [J]. APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2009, : 2356 - +
  • [4] Large-Signal Modeling Methodology for GaN HEMTs for RF Switching-Mode Power Amplifiers Design
    Jarndal, Anwar
    Aflaki, Pouya
    Negra, Renato
    Kouki, Ammar B.
    Ghannouchi, Fadhel M.
    [J]. INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2011, 21 (01) : 45 - 51
  • [5] Large-Signal FET Models and a New AlGaN/GaN HFET Model for Power Amplifier Design
    Trew, R. J.
    Hou, D.
    Schimizzi, R.
    Goswami, A.
    Bilbro, G. L.
    [J]. 2012 IEEE INTERNATIONAL CONFERENCE ON WIRELESS INFORMATION TECHNOLOGY AND SYSTEMS (ICWITS), 2012,
  • [6] A large-signal model of GaNHEMTs for linear high power amplifier design
    Mengistu, Endalkachew S.
    Kompa, Guenter
    [J]. 2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, 2006, : 292 - +
  • [7] ACCURATE LARGE-SIGNAL GAAS-MESFET MODELING FOR A POWER MMIC AMPLIFIER DESIGN
    DORTU, JM
    MULLER, JE
    [J]. MICROWAVE JOURNAL, 1993, 36 (04) : 74 - &
  • [8] A Large-Signal Graphene FET Model
    Habibpour, Omid
    Vukusic, Josip
    Stake, Jan
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) : 968 - 975
  • [9] ACCURATE LARGE-SIGNAL GAAS-MESFET AND HEMT MODELING FOR POWER MMIC AMPLIFIER DESIGN
    DORTU, JM
    MULLER, JE
    PIROLA, M
    GHIONE, G
    [J]. INTERNATIONAL JOURNAL OF MICROWAVE AND MILLIMETER-WAVE COMPUTER-AIDED ENGINEERING, 1995, 5 (03): : 195 - 209
  • [10] Design methodology for a switching-mode RF CMOS power amplifier with an output transformer
    Lee, Changhyun
    Park, Changkun
    [J]. INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2016, 8 (03) : 471 - 477
12345