Accurate large-signal FET model tailored for switching-mode power amplifier design

被引：0

作者：

Liu, Lin-Sheng ^{[1
]}

Ma, Jian-Guo ^{[2
]}

Ng, Geok-Ing ^{[3
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China

[2] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China

[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

IEICE ELECTRONICS EXPRESS | 2010年 / 7卷 / 22期

关键词：

power amplifier; switching-mode; GaN HEMT; large-signal model; parameter extraction;

D O I：

10.1587/elex.7.1672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large-signal FET model for the simulation and design of switching-mode high-efficiency power amplifiers (PAs) is presented. The proposed nonlinear model is constructed by accurately characterizing the ON and OFF behaviors of the active FET device, along with its parameter extraction associated with the specific regions. The robustness of the model in predicting the switching-mode operation of on-wafer GaN-based HEMTs is demonstrated by experimental results. Moreover, the model has been employed for designing an inverse Class-F PA using a commercial high-power GaN HEMT. Good agreement between amplifier simulation and measurement proves the validity of the proposed large-signal model.

引用

页码：1672 / 1678

页数：7

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