GaN Power Amplifier Design Exploiting Wideband Large-Signal Matching

被引：0
|
作者：
Di Falco, Sergio [1 ]
Raffo, Antonio [1 ]
Resca, Davide [1 ]
Scappaviva, Francesco [1 ]
Vadala, Valeria [2 ]
Vannini, Giorgio [2 ]
机构：
[1] MEC Srl, Via San Nicolo di Villola 1, I-40127 Bologna, Italy
[2] Univ Ferrara, Dept Engn, I-44122 Ferrara, Via Saragat, Italy
来源：
2012 WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE-WAVE CIRCUITS (INMMIC) | 2012年
关键词：
Microwave amplifier; power amplifiers; Wideband amplifiers; large-signal measurements;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present manuscript details a wideband high power amplifier design, based on 5-mm GaN power bar. In particular, a broadband input large-signal matching condition has been realized, that ensures optimal power transfer under actual device operation. The measured performance of the PA perfectly matches the expected predictions based on large-signal measurements carried out on a 1.25-mm GaN elementary cell.
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页数：3
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