Effects of annealing on laser-induced damage threshold of TiO2/SiO2 high reflectors

被引：64
|
作者：
Yao, Jianke [1 ]
Shao, Handa
He, Hongbo
Fan, Zhengxiu
机构：
[1] Shanghai Inst Opt & Fine Mech, R&D Ctr Opt Thin Film Coatings, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100080, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 22期
基金：
中国国家自然科学基金;
关键词：
annealing; TiO2/SiO2 high reflectors; absorption; laser damage; x-ray photoelectron spectroscopy;
D O I：
10.1016/j.apsusc.2007.05.005
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The mechanism of improving 1064 nm, 12 ns laser-induced damage threshold (LIDT) of TiO2/SiO2 high reflectors (HR) prepared by electronic beam evaporation from 5.1 to 13.1 J/cm(2) by thermal annealing is discussed. Through optical properties, structure and chemical composition analysis, it is found that the reduced atomic non-stoichiometric defects are the main reason of absorption decrease and LIDT rise after annealing. A remarkable increase of LIDT is found at 300 degrees C annealing. The refractive index and film inhomogeneity rise, physical thickness decrease, and film stress changes from compress stress to tensile stress due to the structure change during annealing. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：8911 / 8914
页数：4
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