Fluorinated chemically amplified dissolution inhibitors for 157 nm nanolithography

被引:8
|
作者
Fresco, ZM [1 ]
Bensel, N [1 ]
Suez, I [1 ]
Backer, SA [1 ]
Fréchet, JMJ [1 ]
Conley, W [1 ]
机构
[1] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA
关键词
dissolution inhibitor; 157; nm; QCM; hexafluoroalcohol;
D O I
10.2494/photopolymer.16.27
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
We present the synthesis and screening of a series of new fluorinated materials designed to act as chemically amplified dissolution inhibitors for 157 nm lithography. Dissolution rates measured using a quartz crystal microbalance apparatus on a variety of matrix polymers as well as initial results demonstrating the imageability of this multi-component system are described.
引用
收藏
页码:27 / 35
页数:9
相关论文
共 50 条
  • [1] Fluorinated dissolution inhibitors for 157 nm lithography
    Hamad, AH
    Bae, YC
    Liu, XQ
    Ober, CK
    Houlihan, FM
    Dabbagh, G
    Novembre, AE
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 477 - 485
  • [2] Evaluation of fluorinated dissolution inhibitors for 157 nm lithography
    Hamad, AH
    Houlihan, FM
    Seger, L
    Chang, C
    Ober, CK
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 558 - 568
  • [3] Dissolution inhibitors for 193-nm chemically amplified resists
    Toshiba Corp, Kawasaki, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (7625-7631):
  • [4] Dissolution inhibitors for 193-nm chemically amplified resists
    Ushirogouchi, T
    Asakawa, K
    Okino, T
    Shida, N
    Kihara, N
    Nakase, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7625 - 7631
  • [5] Fluorinated polymers and dissolution inhibitors for 157nm microlithography.
    Willson, CG
    Trinque, BC
    Osborn, BP
    Chambers, CR
    Hsieh, YT
    Kusumoto, S
    Miller, D
    Zimmerman, P
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U545 - U545
  • [6] Fluorinated polymers and dissolution inhibitors for 157nm microlithography.
    Willson, CG
    Trinque, BC
    Osborn, BP
    Chambers, CR
    Hsieh, YT
    Kusumoto, S
    Miller, D
    Zimmerman, P
    Conley, W
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U499 - U499
  • [7] Dissolution inhibitors for 157 nm microlithography
    Conley, W
    Miller, D
    Chambers, C
    Osborn, B
    Hung, RJ
    Tran, HV
    Trinque, BC
    Pinnow, M
    Chiba, T
    McDonald, S
    Zimmerman, P
    Dammel, R
    Romano, A
    Willson, CG
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 69 - 75
  • [8] Polymer design for 157 nm chemically amplified resists
    Ito, H
    Wallraff, GM
    Brock, P
    Fender, N
    Truong, H
    Breyta, G
    Miller, DC
    Sherwood, MH
    Allen, RD
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 273 - 284
  • [9] Characterization of fluoropolymers for 157 nm chemically amplified resist
    Itani, T
    Toriumi, M
    Naito, T
    Ishikawa, S
    Miyoshi, S
    Yamazaki, T
    Watanabe, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2705 - 2708
  • [10] Dissolution characteristics of chemically amplified 193 nm resists
    Itani, T
    Yoshino, H
    Hashimoto, S
    Yamana, M
    Miyasaka, M
    Tanabe, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3726 - 3729