共 50 条
- [31] E-beam nanolithography using chemically amplified resists. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U503 - U503
- [32] Dissolution inhibitors for 157 mm photolithography ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 93 - 102
- [34] Recent advances in fluorinated resists for application at 157 nm ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 134 - 150
- [35] Dissolution characteristics of chemically amplified extreme ultraviolet resist JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06): : 2261 - 2264
- [36] NANOLITHOGRAPHY USING A CHEMICALLY AMPLIFIED NEGATIVE RESIST BY ELECTRON-BEAM EXPOSURE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B): : 6993 - 6997
- [38] Evaluation of the standard addition method to determine rate constants for acid generation in chemically amplified photoresist at 157nm ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 1056 - 1065
- [40] The challenges of 157 nm nanolithography: surface morphology of silicon-based copolymers MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2003, 23 (6-8): : 995 - 999