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- [41] Evaluation of outgassing from a fluorinated resist for 157 nm lithography JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 3513 - 3517
- [42] Investigation of a fluorinated ESCAP based resist for 157 nm lithography ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 522 - 532
- [43] Fluorinated resists for application at 157 nm: Recent advances. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2004, 228 : U427 - U427
- [44] Synthesis of novel fluorinated norbornene derivatives for 157 nm application ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 589 - 599
- [45] Evaluation of novel fluorinated resist matrices for 157 nm lithography ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 22 - 32
- [46] Fluorinated polyvinylalcohols as a photoresist platform for 157 nm lithography. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 220 : U370 - U370
- [48] Effect of developer temperature and normality on chemically amplified photoresist dissolution MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 1001 - 1011
- [49] Non-chemically amplified resists for 193 nm lithography ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923
- [50] Soft bake effect in 193 nm chemically amplified resist ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 1062 - 1069