Dissolution inhibitors for 157 nm microlithography

被引:2
|
作者
Conley, W [1 ]
Miller, D [1 ]
Chambers, C [1 ]
Osborn, B [1 ]
Hung, RJ [1 ]
Tran, HV [1 ]
Trinque, BC [1 ]
Pinnow, M [1 ]
Chiba, T [1 ]
McDonald, S [1 ]
Zimmerman, P [1 ]
Dammel, R [1 ]
Romano, A [1 ]
Willson, CG [1 ]
机构
[1] Int SEMATECH, Austin, TX USA
关键词
157nm resist; polyfluoronorbornane; dissolution inhibitor; DNQ; carbon monoxide copolymers;
D O I
10.1117/12.474282
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fluorocarbon based polymers have been identified as promising resist candidates for 157nm material design because of their relatively high transparency at this wavelength. This paper reports our recent progress toward developing 157nm resist materials based on transparent dissolution inhibitors. These 2 component resist systems have been prepared and preliminary imaging studies at 157nm are described. Several new approaches to incorporating these transparent monomers into functional polymers have been investigated and are described. The lithographic performance of some of these polymers is discussed.
引用
收藏
页码:69 / 75
页数:7
相关论文
共 50 条
  • [1] Fluorinated polymers and dissolution inhibitors for 157nm microlithography.
    Willson, CG
    Trinque, BC
    Osborn, BP
    Chambers, CR
    Hsieh, YT
    Kusumoto, S
    Miller, D
    Zimmerman, P
    Conley, W
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U499 - U499
  • [2] Fluorinated polymers and dissolution inhibitors for 157nm microlithography.
    Willson, CG
    Trinque, BC
    Osborn, BP
    Chambers, CR
    Hsieh, YT
    Kusumoto, S
    Miller, D
    Zimmerman, P
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U545 - U545
  • [3] Fluorinated dissolution inhibitors for 157 nm lithography
    Hamad, AH
    Bae, YC
    Liu, XQ
    Ober, CK
    Houlihan, FM
    Dabbagh, G
    Novembre, AE
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 477 - 485
  • [4] Dissolution inhibitors for 157 nm lithography: A progress report
    Conley, W
    Miller, D
    Chambers, C
    Trinque, BC
    Osborn, B
    Chiba, T
    Zimmerman, P
    Dammel, R
    Romano, A
    Willson, CG
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2002, 15 (04) : 613 - 617
  • [5] Evaluation of fluorinated dissolution inhibitors for 157 nm lithography
    Hamad, AH
    Houlihan, FM
    Seger, L
    Chang, C
    Ober, CK
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 558 - 568
  • [6] Resist materials for 157 nm microlithography: An update
    Hung, RJ
    Tran, HV
    Trinque, BC
    Chiba, T
    Yamada, S
    Sanders, DP
    Connor, EF
    Grubbs, RH
    Klopp, J
    Frechet, JMJ
    Thomas, BH
    Shafer, GJ
    DesMarteau, DD
    Conley, W
    Willson, CG
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVIII, PTS 1 AND 2, 2001, 4345 : 385 - 395
  • [7] Advances in resists for 157 nm microlithography.
    Ober, CK
    Vaishali, V
    Douki, K
    Liu, XQ
    Kwark, YJ
    Bae, YC
    Conley, W
    Miller, D
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U545 - U546
  • [8] Recent advances in resists for 157 nm microlithography
    Trinque, BC
    Chiba, T
    Hung, RJ
    Chambers, CR
    Pinnow, MJ
    Osburn, BP
    Tran, HV
    Wunderlich, J
    Hsieh, YT
    Thomas, BH
    Shafer, G
    DesMarteau, DD
    Conley, W
    Willson, CG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (02): : 531 - 536
  • [9] Advances in resists for 157nm microlithography
    Trinque, BC
    Osborn, BP
    Chambers, CR
    Hsieh, YT
    Corry, S
    Chiba, T
    Hung, RJ
    Tran, HV
    Zimmerman, P
    Miller, D
    Conley, W
    Willson, CG
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 58 - 68
  • [10] Fluorinated chemically amplified dissolution inhibitors for 157 nm nanolithography
    Fresco, ZM
    Bensel, N
    Suez, I
    Backer, SA
    Fréchet, JMJ
    Conley, W
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2003, 16 (01) : 27 - 35