Dissolution inhibitors for 157 nm microlithography

被引：2

作者：

Conley, W ^{[1
]}

Miller, D ^{[1
]}

Chambers, C ^{[1
]}

Osborn, B ^{[1
]}

Hung, RJ ^{[1
]}

Tran, HV ^{[1
]}

Trinque, BC ^{[1
]}

Pinnow, M ^{[1
]}

Chiba, T ^{[1
]}

McDonald, S ^{[1
]}

Zimmerman, P ^{[1
]}

Dammel, R ^{[1
]}

Romano, A ^{[1
]}

Willson, CG ^{[1
]}

机构：

[1] Int SEMATECH, Austin, TX USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2 | 2002年 / 4690卷

关键词：

157nm resist; polyfluoronorbornane; dissolution inhibitor; DNQ; carbon monoxide copolymers;

D O I：

10.1117/12.474282

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fluorocarbon based polymers have been identified as promising resist candidates for 157nm material design because of their relatively high transparency at this wavelength. This paper reports our recent progress toward developing 157nm resist materials based on transparent dissolution inhibitors. These 2 component resist systems have been prepared and preliminary imaging studies at 157nm are described. Several new approaches to incorporating these transparent monomers into functional polymers have been investigated and are described. The lithographic performance of some of these polymers is discussed.

引用

页码：69 / 75

页数：7

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