Contact resistance and trap density of oligoaniline field-effect transistor

The characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated with 16-mer oligoaniline (16ANI) as semiconducting layer have been investigated. It is found that the contact resistance can be reduced three orders of magnitude by modifying the interface between metal electrode and organic material. Hence the field-effect mobility of modified 16ANI MOSFET can be increased by four times. The mobility can be further improved in the subsequent thermal treatment process. It is found that the field-effect mobility rather depends on trap density than on contact resistance.