Field-effect transistor with oligoaniline thin films as semiconductor

被引：0
|
作者：
Kuo, CT [1 ]
Weng, SZ [1 ]
机构：
[1] Tatung Inst Technol, Dept Chem Engn, Taipei 104, Taiwan
来源：
POLYMERS FOR ADVANCED TECHNOLOGIES | 2000年 / 11卷 / 8-12期
关键词：
oligoaniline; metal-oxide-semiconductor; field-effect transistor; field-effect mobility; on/off current ratio; vacuum evaporating technique;
D O I：
10.1002/1099-1581(200008/12)11:8/12<716::AID-PAT25>3.0.CO;2-B
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
These field-effect transistors (FETs) are fabricated with 16ANI (16-mer aniline oligomer) thin films as the semiconducting layer. These FETs have ideal source current-drain source voltage characteristics. The field-effect mobility (fabricated by vacuum evaporation) is 0.034 cm(2)/V sec and on/off current ratio above 10(4), which are two orders of magnitude larger than those fabricated by spin-coating technique, These transistor's performances can be improved significantly for FET fabrication by vacuum evaporation. Copyright (C) 2000 John Wiley & Sons, Ltd.
引用
收藏
页码：716 / 722
页数：7
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