THIN SIC FILMS AS GAAS FIELD-EFFECT TRANSISTOR INSULATORS

A thorough investigation of the electrical properties of the interface between sputter deposited SiC and single crystal GaAs has been performed. Using a previously developed modeling system, element values for the circuit model were obtained. From these element values, physical parameters have been calculated. Correlation of the physical parameters with the deposition procedures was made in order to determine the optimal deposition parameters. The results indicate that SiC does not have a high enough resistivity to be a field effect transistor (FET) gate insulator. However, good adhesion and other film properties indicate that SiC may make a good “barrier layer” for other possible insulators. An attempt to fabricate pseudomorphic films of SiC on GaAs was made in order to study the more complex metaMnsulator SiC-GaAs system for potential FET application. © 1990, American Vacuum Society. All rights reserved.