Field-effect transistor based on β-SiC nanowire

被引：68

作者：

Zhou, W. M. ^{[1
]}

Fang, F. ^{[1
]}

Hou, Z. Y. ^{[1
]}

Yan, L. J. ^{[1
]}

Zhang, Y. F. ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Natl Key Lab Nano Micro Fabricat Technol, Key Lab Thin Film & Microfabricat, Minist Educ,Inst Micro & Nano Sci & Technol, Shanghai 200030, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 06期

关键词：

field-effect transistor (FET); high temperature; beta-SiC nanowires;

D O I：

10.1109/LED.2006.874219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

beta-SiC nanowires were synthesized by the way of high-frequency induction with diameter range between 10 to 25 nm and the length was up to 10 mu m. Field-effect transistor was fabricated with those synthesized beta-SiC nanowires. The carrier mobilities of the n-type SiCFETs were 6.4 and 15.9 cm(2)/V(.)s when V-ds is 0.01 and 0.05 V at room temperature, respectively. At high temperature, the drain current increased by one order of magnitude than it did at room temperature. The carrier mobility, versus 1000/T agreed well with the Arrhenius function. The SiCFETs in this letter would be used as electrical devices operated in high temperatures because of their superior properties.

引用

页码：463 / 465

页数：3

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