Thermionic emission model for contact resistance in organic field-effect transistor

被引：21
|
作者：
Weis, Martin [1 ]
Nakao, Motoharu [1 ]
Lin, Jack [1 ]
Manaka, Takaaki [1 ]
Iwamoto, Mitsumasa [1 ]
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
THIN SOLID FILMS | 2009年 / 518卷 / 02期
基金：
日本学术振兴会;
关键词：
Organic field-effect transistor; Contact resistance; Thermionic emission model;
D O I：
10.1016/j.tsf.2009.07.088
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Injection mechanism of top-contact pentacene field-effect transistor (OFET) was investigated in respect to the internal field. The contact resistance was evaluated by the transmission line method for various applied external voltages as well as various pentacene film thicknesses. The behaviour of contact resistance was described in terms of the thermionic emission model (Schottky injection) and internal electric field generated by excess charges accumulated on pentacene-gate insulator interface. It was shown that pentacene film thickness changes the internal electric field affecting the carrier injection barrier. It was concluded that the space-charge field effect made a significant contribution for smaller pentacene film thicknesses and therefore in accordance to the thermionic model was able to decrease contact resistance representing the potential drop. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：795 / 798
页数：4
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