A 5.2 GHz CMOS low noise amplifier with high-Q inductors embedded in wafer-level chip-scale package

被引：1

作者：

Fukuda, Satoshi ^{[1
]}

Ito, Hiroyuki ^{[2
]}

Itoi, Kazuhisa ^{[3
]}

Sato, Masakazu ^{[3
]}

Ito, Tatsuya ^{[3
]}

Yamauchi, Ryozo ^{[4
]}

Okada, Kenichi ^{[1
]}

Masu, Kazuya ^{[1
]}

机构：

[1] Tokyo Inst Technol, Integrated Res Inst, Midori Ku, 4259-R2-17 Nagatsuta, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama 2268503, Japan

[3] Fujikura Ltd, Elect Device Lab, Chiba 2858550, Japan

[4] Fujikura Ltd, Tokyo 1358512, Japan

来源：

2007 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: ENABLING TECHNOLOGIES FOR EMERGING WIRELESS SYSTEMS | 2007年

关键词：

D O I：

10.1109/RFIT.2007.4443913

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a low noise amplifier (LNA) with high-Q inductors in a wafer-level chip-scale package (WL-CSP) process. Q-factor of inductors has big impacts on characteristics of LNAs, thus we investigate availability of WL-CSP high-Q inductors. A common-source LNA with inductive degeneration is used for discussion. The 5.2 GHz LNA with WL-CSP inductors provides a noise figure of 1.7 dB which is 1.5 dB smaller than that with on-chip inductors.

引用

下载

页码：34 / +

页数：2

共 50 条

[21] Thin-Film-Flip-Chip LEDs Grown on Si Substrate Using Wafer-Level Chip-Scale Package
Lee, Keon Hwa
Asadirad, Mojtaba
Shervin, Shahab
Oh, Seung Kyu
Oh, Jeong Tak
Song, June-O
Moon, Yong-Tae
Ryou, Jae-Hyun
IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 28 (18) : 1956 - 1959
[22] High-Q Embedded Inductors in Fan-Out eWLB for 6 GHz CMOS VCO
Wojnowski, M.
Issakov, V.
Knoblinger, G.
Pressel, K.
Sommer, G.
Weigel, R.
2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 1363 - 1370
[23] High-Q inductors and transmission lines on 20 Ω.cm Si using wafer-level packaging technology
Carchon, G
Sun, X
De Raedt, W
2003 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2003, : 111 - 114
[24] High-performance 2-GHz CMOS LC VCO with high-Q embedded inductors using wiring metal layer in a package
Yoon, Sang-Woong
Pinel, Stephan
Laskar, Joy
IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2006, 29 (03): : 639 - 646
[25] A 0.18um CMOS using high-Q active inductors for multi-band low noise amplifier
Yang, Jenn-Tzer
Lee, Yuan-Hao
Huang, Yi-Yuan
Mu, Ya-Min
Ho, Yen-Ching
EDSSC: 2007 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, VOLS 1 AND 2, PROCEEDINGS, 2007, : 1001 - 1004
[26] A Low Phase Noise LC-VCO with a High-Q Inductor Fabricated by Wafer Level Package Technology
Ohashi, Kazuma
Kobayashi, Yuka
Ito, Hiroyuki
Okada, Kenichi
Hatakeyama, Hideki
Aizawa, Takuya
Ito, Tatsuya
Yamauchi, Ryozo
Masu, Kazuya
2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2, 2008, : 107 - +
[27] A 1.75GHz inductor-less CMOS low noise amplifier with high-Q active inductor load
Yang, JN
Cheng, YC
Hsu, TY
Hsu, TR
Lee, CY
PROCEEDINGS OF THE 44TH IEEE 2001 MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2, 2001, : 816 - 819
[28] A 1 V 23 GHz Low-Noise Amplifier in 45 nm Planar Bulk-CMOS Technology With High-Q Above-IC Inductors
Wang, Wen-Chieh
Huang, Zue-Der
Carchon, Geert
Mercha, Abdelkarim
Decoutere, Stefaan
De Raedt, Walter
Wu, Chung-Yu
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (05) : 326 - 328
[29] Gold embrittlement of solder joints in wafer-level chip-scale package on printed circuit board with Ni/Au surface finish
Huang, Xingjia
Lee, S. W. Ricky
Li, Ming
Chen, William T.
IEEE TRANSACTIONS ON ELECTRONICS PACKAGING MANUFACTURING, 2008, 31 (03): : 185 - 191
[30] Effect of local grain distribution and Enhancement on edgebond applied wafer-level chip-scale package (WLCSP) thermal cycling performance
Lee, Tae-Kyu
Xie, Weidong
Perng, Steven
Ibe, Edward
Loh, Karl
2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2016, : 1502 - 1508

← 1 2 3 4 5 →