Thin-Film-Flip-Chip LEDs Grown on Si Substrate Using Wafer-Level Chip-Scale Package

Demonstrated are visible GaN-based light-emitting diodes (LEDs) on economical large-area Si substrates using an advanced device and packaging architecture to improve optical output power, while reducing manufacturing costs. The process employs thin-film-flip-chip devices and wafer-level chip-scale packages and uses through-Si-via substrate and anisotropic conductive film for bonding. The improved curvature control region is applied in the epitaxial growth of the LED structure on a Si substrate to achieve flat wafers for epitaxial structures at room temperature, which is critical for wafer-level bonding. External quantum efficiency and light-output power at 350 mA increase by similar to 12% compared with those of conventional flip-chip LEDs grown on a sapphire substrate. The devices also show a reverse-bias leakage current failure rate of <10%.