Experimental Analysis of Negative Temperature Bias Instabilities Degradation in Junctionless Nanowire Transistors

被引：0

作者：

Graziano Junior, N. ^{[1
]}

Trevisoli, R. ^{[2
]}

Barraud, S. ^{[3
]}

Doria, R. T. ^{[1
]}

机构：

[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo, Brazil

[2] Univ Fed Abc, Santo Andre, Brazil

[3] Commissariat Energie Atom & Energies Alternat, LETI, Grenoble, France

来源：

2018 33RD SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO) | 2018年

基金：

巴西圣保罗研究基金会;

关键词：

Junctionless Nanowire Transistors; Negative Bias Temperature Instabilities; NBTI; SOI Technology; MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present work, it is analyzed, for the first time, the degradation by Negative Bias Temperature Instability in Junctionless Nanowire Transistors (JNTs) through experimental measurements and three-dimensional numerical simulations. The experimental data was analyzed considering p-type JNTs devices with doping concentrations of 5 x 10(18) cm(-3) and 1 x 10(19) cm(-3) with different channel lengths from 50 nm up to 70 nm. The transistors were submitted to two different drain voltages (-0.05 V and -1.0 V), where it could be noted that transistors with lower concentrations present higher NBTI for the same bias condition. Through the numerical simulations it was possible to verify that this effect is related to the larger electric field presented by the structure with lower doping concentration.

引用

页数：4

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