Experimental Analysis of Negative Temperature Bias Instabilities Degradation in Junctionless Nanowire Transistors

In the present work, it is analyzed, for the first time, the degradation by Negative Bias Temperature Instability in Junctionless Nanowire Transistors (JNTs) through experimental measurements and three-dimensional numerical simulations. The experimental data was analyzed considering p-type JNTs devices with doping concentrations of 5 x 10(18) cm(-3) and 1 x 10(19) cm(-3) with different channel lengths from 50 nm up to 70 nm. The transistors were submitted to two different drain voltages (-0.05 V and -1.0 V), where it could be noted that transistors with lower concentrations present higher NBTI for the same bias condition. Through the numerical simulations it was possible to verify that this effect is related to the larger electric field presented by the structure with lower doping concentration.