InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum

被引：5

作者：

Damilano, B ^{[1
]}

Grandjean, N ^{[1
]}

Massies, J ^{[1
]}

机构：

[1] Ctr Rech Hetero Epitaxie & Applicat, CNRS, F-06560 Valbonne, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

InGaN/GaN quantum wells; molecular beam epitaxy;

D O I：

10.1016/S0921-5107(00)00687-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaN/GaN single quantum wells (SQWs) are grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The InGaN material quality is optimized through the photoluminescence (PL) properties. It is found that the growth temperature is critical for both the PL efficiency and the indium incorporation in the InGaN layer. InGaN/GaN SQWs with In compositions larger than 15% present high PL efficiencies at room temperature. Depending on the QW width, the InGaN PL energy can be tuned from blue to red. This behavior is ascribed to a strong quantum-confined Stark effect. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

下载

页码：224 / 226

页数：3

共 50 条

[21] Fabrication of InGaN multiple quantum wells grown by hydrogen flux modulation in RF molecular beam epitaxy
Takahashi, K.
Okada, Y.
Kawabe, M.
2001, Japan Society of Applied Physics (40):
[22] Fabrication of InGaN multiple quantum wells grown by hydrogen flux modulation in RF molecular beam epitaxy
Takahashi, K
Okada, Y
Kawabe, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (5B): : L502 - L504
[23] Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
Potin, V
Hahn, E
Rosenauer, A
Gerthsen, D
Kuhn, B
Scholz, F
Dussaigne, A
Damilano, B
Grandjean, N
JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) : 145 - 150
[24] Violet InGaN/GaN light emitting diodes grown by molecular beam epitaxy using NH3
Grandjean, N
Massies, J
Leroux, M
Lorenzini, P
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (8A): : L907 - L909
[25] High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy
Shen, XQ
Ide, T
Shimizu, M
Okumura, H
JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) : 5731 - 5733
[26] Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy
Che, SB
Terashima, W
Ishitani, Y
Yoshikawa, A
Matsuda, T
Ishii, H
Yoshida, S
APPLIED PHYSICS LETTERS, 2005, 86 (26) : 1 - 3
[27] The role of surface states and point defects on optical properties of InGaN/GaN multi-quantum wells in nanowires grown by molecular beam epitaxy
Concordel, Alexandre
Bleuse, Joel
Jacopin, Gwenole
Daudin, Bruno
NANOTECHNOLOGY, 2023, 34 (03)
[28] Growth of InGaN films and InGaN/AlGaN multiple quantum wells produced by molecular beam epitaxy
Singh, R
Moustakas, TD
PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES, 1996, 96 (11): : 186 - 196
[29] GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
Tournié, E
Pinault, MA
Laügt, M
Chauveau, JM
Trampert, A
Ploog, KH
APPLIED PHYSICS LETTERS, 2003, 82 (12) : 1845 - 1847
[30] Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
Iizuka, N
Kaneko, K
Suzuki, N
APPLIED PHYSICS LETTERS, 2002, 81 (10) : 1803 - 1805

← 1 2 3 4 5 →