InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum

被引：5

作者：

Damilano, B ^{[1
]}

Grandjean, N ^{[1
]}

Massies, J ^{[1
]}

机构：

[1] Ctr Rech Hetero Epitaxie & Applicat, CNRS, F-06560 Valbonne, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

InGaN/GaN quantum wells; molecular beam epitaxy;

D O I：

10.1016/S0921-5107(00)00687-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaN/GaN single quantum wells (SQWs) are grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The InGaN material quality is optimized through the photoluminescence (PL) properties. It is found that the growth temperature is critical for both the PL efficiency and the indium incorporation in the InGaN layer. InGaN/GaN SQWs with In compositions larger than 15% present high PL efficiencies at room temperature. Depending on the QW width, the InGaN PL energy can be tuned from blue to red. This behavior is ascribed to a strong quantum-confined Stark effect. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

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页码：224 / 226

页数：3

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