Fabrication of InGaN multiple quantum wells grown by hydrogen flux modulation in RF molecular beam epitaxy

被引：0
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作者：
Takahashi, K. [1 ]
Okada, Y. [1 ]
Kawabe, M. [1 ]
机构：
[1] Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
来源：
| 2001年 / Japan Society of Applied Physics卷 / 40期
关键词：
D O I：
10.1143/jjap.40.l502
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学科分类号：
摘要：
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