Explicit model for the gate tunneling current in double-gate MOSFETs

被引：6

作者：

Chaves, Ferney ^{[1
]}

Jimenez, David ^{[1
]}

Sune, Jordi ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Escola Engn, Bellaterra 08193, Spain

来源：

SOLID-STATE ELECTRONICS | 2012年 / 68卷

关键词：

Double-gate MOSFETs; Modeling quantization; Gate tunneling; Direct tunneling; LEAKAGE CURRENT; LAYER;

D O I：

10.1016/j.sse.2011.11.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present an explicit compact quantum model for the gate tunneling current in double-gate metal-oxide-semiconductor field-effect transistors (DG-MOSFETs). Specifically, an explicit closed-form expression is proposed, useful for the fast evaluation of the gate leakage in the context of electrical circuit simulators. A benchmarking test against 1D self-consistent numerical solution of Schrodinger-Poisson (SP) equations has been performed to demonstrate the accuracy of the model. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：93 / 97

页数：5

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