Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

被引：69

作者：

Chang, L ^{[1
]}

Yang, KJ ^{[1
]}

Yeo, YC ^{[1
]}

Polishchuk, I ^{[1
]}

King, TJ ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 12期

关键词：

direct tunneling; double-gate MOSFET; energy quantization; gate leakage current; high-k dielectrics; threshold voltage control; ultrathin body MOSFET; wavefunction penetration;

D O I：

10.1109/TED.2002.807446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of body thickness scaling and channel crystallographic orientation are studied. The impact of threshold voltage control solutions, including doped channel and asymmetric double-gate structures is also investigated. Future gate dielectric thickness scaling and the use of high-kappa gate dielectrics are discussed.

引用

页码：2288 / 2295

页数：8

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