Reconfigurable circuits design based on DG-CNTFET transistors

被引:0
|
作者
Ghabri, Houda [1 ]
ben Issa, Dalenda [1 ]
Samet, Hekmet [1 ]
机构
[1] Univ Sfax, Natl Sch Engn Sfax, LETI Lab, BP 3038, Sfax, Tunisia
关键词
Ambipolar devices; double gate CNTFET; DG-CNTFET modeling; reconfigurable logic design;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Controllable-polarity transistors have an interesting property, they can switch from p-to n- type behavior and vice-versa dynamically. This opens up the opportunity for building novel and complex functions in fine-grain reconfigurable logic inaccessible to MOSFETs. Double-gate carbon nanotube field effect transistors (DG-CNTFETs) is one of the major promising candidate for reconfigurable circuit reaching a good performance levels. In this paper we will demonstrate the benefit of designing a reconfigurable circuit based on a compact physical model of these transistor. First, an overview of different types of carbon nanotube field-effect transistor (CNTFET) is given. DG-CNTFET model is described and characterization of transistor is done. Finally a dynamically reconfigurable 8-function logic gate (CNT-DR8F) based on a (DG-CNTFET) is described, simulated and analyzed.
引用
收藏
页码:677 / 680
页数:4
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