Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

被引：0

作者：

Ong, SY ^{[1
]}

Chor, EF ^{[1
]}

Leung, YK ^{[1
]}

Lee, J ^{[1
]}

Li, WS ^{[1
]}

See, A ^{[1
]}

Chan, L ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117548, Singapore

来源：

DESIGN, MODELING AND SIMULATION IN MICROELECTRONICS | 2000年 / 4228卷

关键词：

indium; short channel effects; reverse short channel effects; steep retrograde channel profile;

D O I：

10.1117/12.405423

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Integration issues involved in incorporating Indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. Techniques are aimed at achieving a Steep Retrograde Channel Profile (SRCP) for effective Short Channel Effects (SCE) and Reverse Short Channel Effects (RSCE) control. One such technique is the inclusion of a Rapid Thermal Anneal step after NLDD implant (NLDD RTA). Alternative techniques such as Boron pocket removal and NLDD dose reduction are also studied.

引用

页码：270 / 278

页数：9

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