Influence of post fabrication annealing on device performance of InAlN/ GaN high electron mobility transistors

被引：1
|
作者：
Luo, Xin [1 ]
Cui, Peng [1 ]
Linewih, Handoko [1 ]
Cheong, Kuan Yew [2 ]
Xu, Mingsheng [1 ]
Chen, Siheng [1 ]
Wang, Liu [1 ]
Sun, Jiuji [1 ]
Dai, Jiacheng [1 ]
Xu, Xiangang [1 ]
Han, Jisheng [1 ]
机构：
[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China
[2] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Seberang Perai 14300, Pulau Pinang, Malaysia
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2024年 / 187卷
基金：
中国国家自然科学基金;
关键词：
InAlN/GaN HEMT; Post fabrication annealing; Schottky barrier; Electron mobility; Scattering; PIEZOELECTRIC POLARIZATION; ALGAN/GAN;
D O I：
10.1016/j.jpcs.2024.111870
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this study, effect of post-fabrication annealing (PFA) on the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) has been investigated. With PFA, the gate Schottky barrier height increases by 94 % (from 1.03 eV to 2.00 eV) and the interface trap state density (D-it) is reduced by 27 %. Compared with the device without PFA, a higher on-current (11 %), a larger on/off current ratio (similar to 1 order), a higher transconductance (3 %), a reduced gate leakage current (84 %) and a lower subthreshold swing (10 %) are recorded in device with PFA. In addition, the improved electron mobility is observed and the reduction of polarization Coulomb field (PCF) scattering is proven in device with PFA due to the enhancement of polarization electrical field in InAlN/GaN heterostructure.
引用
收藏
页数：7
相关论文
共 50 条
  • [1] Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors
    Luo, Xin
    Cui, Peng
    Linewih, Handoko
    Cheong, Kuan Yew
    Xu, Mingsheng
    Chen, Siheng
    Wang, Liu
    Sun, Jiuji
    Dai, Jiacheng
    Xu, Xiangang
    Han, Jisheng
    Journal of Physics and Chemistry of Solids, 2024, 187
  • [2] Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing
    Chen, Siheng
    Cui, Peng
    Linewih, Handoko
    Cheong, Kuan Yew
    Xu, Mingsheng
    Luo, Xin
    Wang, Liu
    Sun, Jiuji
    Dai, Jiacheng
    Han, Jisheng
    Xu, Xiangang
    SOLID-STATE ELECTRONICS, 2024, 213
  • [3] High performance InAlN/GaN high electron mobility transistors for low voltage applications
    Mi, Minhan
    Zhang, Meng
    Wu, Sheng
    Yang, Ling
    Hou, Bin
    Zhou, Yuwei
    Guo, Lixin
    Ma, Xiaohua
    Hao, Yue
    CHINESE PHYSICS B, 2020, 29 (05)
  • [4] High performance InAlN/GaN high electron mobility transistors for low voltage applications
    宓珉瀚
    张濛
    武盛
    杨凌
    侯斌
    周雨威
    郭立新
    马晓华
    郝跃
    Chinese Physics B, 2020, (05) : 548 - 551
  • [5] The structure of InAlN/GaN heterostructures for high electron mobility transistors
    Vilalta-Clemente, A.
    Poisson, M. A.
    Behmenburg, H.
    Giesen, C.
    Heuken, M.
    Ruterana, P.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (05): : 1105 - 1108
  • [6] Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors
    Polyakov, A. Y.
    Smirnov, N. B.
    Shchemerov, I. V.
    Yang, Jiancheng
    Ren, Fan
    Lo, Chien-Fong
    Laboutin, Oleg
    Johnson, J. W.
    Pearton, S. J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (02) : Q1 - Q7
  • [7] Side effects in InAlN/GaN high electron mobility transistors
    Kourdi, Z.
    Bouazza, B.
    Guen-Bouazza, A.
    Khaouani, M.
    MICROELECTRONIC ENGINEERING, 2015, 142 : 52 - 57
  • [8] InAlN/AlN/GaN heterostructures for high electron mobility transistors
    Usov, S. O.
    Sakharov, A. V.
    Tsatsulnikov, A. F.
    Lundin, V. W.
    Zavarin, E. E.
    Nikolaev, A. E.
    Yagovkina, M. A.
    Zemlyakov, V. E.
    Egorkin, V. I.
    Ustinov, V. M.
    3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [9] Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment
    Chen, Siheng
    Cui, Peng
    Xu, Mingsheng
    Lin, Zhaojun
    Xu, Xiangang
    Zeng, Yuping
    Han, Jisheng
    CRYSTALS, 2022, 12 (11)
  • [10] Optimization of the ohmic contact processing in InAlN/GaN high electron mobility transistors for lower temperature of annealing
    Cico, Karol
    Gregusova, Dagmar
    Gazi, Stefan
    Soltys, Jan
    Kuzmik, Jan
    Carlin, Jean-Francois
    Grandjean, Nicolas
    Pogany, Dionyz
    Froehlich, Karol
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1, 2010, 7 (01): : 108 - 111
12345