Influence of post fabrication annealing on device performance of InAlN/ GaN high electron mobility transistors

被引：1

作者：

Luo, Xin ^{[1
]}

Cui, Peng ^{[1
]}

Linewih, Handoko ^{[1
]}

Cheong, Kuan Yew ^{[2
]}

Xu, Mingsheng ^{[1
]}

Chen, Siheng ^{[1
]}

Wang, Liu ^{[1
]}

Sun, Jiuji ^{[1
]}

Dai, Jiacheng ^{[1
]}

Xu, Xiangang ^{[1
]}

Han, Jisheng ^{[1
]}

机构：

[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China

[2] Univ Sains Malaysia, Sch Mat & Mineral Resources Engn, Elect Mat Res Grp, Seberang Perai 14300, Pulau Pinang, Malaysia

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2024年 / 187卷

基金：

中国国家自然科学基金;

关键词：

InAlN/GaN HEMT; Post fabrication annealing; Schottky barrier; Electron mobility; Scattering; PIEZOELECTRIC POLARIZATION; ALGAN/GAN;

D O I：

10.1016/j.jpcs.2024.111870

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, effect of post-fabrication annealing (PFA) on the electrical performance of the InAlN/GaN high electron mobility transistors (HEMTs) has been investigated. With PFA, the gate Schottky barrier height increases by 94 % (from 1.03 eV to 2.00 eV) and the interface trap state density (D-it) is reduced by 27 %. Compared with the device without PFA, a higher on-current (11 %), a larger on/off current ratio (similar to 1 order), a higher transconductance (3 %), a reduced gate leakage current (84 %) and a lower subthreshold swing (10 %) are recorded in device with PFA. In addition, the improved electron mobility is observed and the reduction of polarization Coulomb field (PCF) scattering is proven in device with PFA due to the enhancement of polarization electrical field in InAlN/GaN heterostructure.

引用

页数：7

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