Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

被引：0
|
作者：
Ong, SY [1 ]
Chor, EF [1 ]
Leung, YK [1 ]
Lee, J [1 ]
Li, WS [1 ]
See, A [1 ]
Chan, L [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117548, Singapore
来源：
DESIGN, MODELING AND SIMULATION IN MICROELECTRONICS | 2000年 / 4228卷
关键词：
indium; short channel effects; reverse short channel effects; steep retrograde channel profile;
D O I：
10.1117/12.405423
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Integration issues involved in incorporating Indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. Techniques are aimed at achieving a Steep Retrograde Channel Profile (SRCP) for effective Short Channel Effects (SCE) and Reverse Short Channel Effects (RSCE) control. One such technique is the inclusion of a Rapid Thermal Anneal step after NLDD implant (NLDD RTA). Alternative techniques such as Boron pocket removal and NLDD dose reduction are also studied.
引用
收藏
页码：270 / 278
页数：9
相关论文
共 50 条
  • [21] Effect of varying Indium concentration of InGaAs channel on device and circuit performance of nanoscale double gate heterostructure MOSFET
    Biswas, Kalyan
    Sarkar, Angsuman
    Sarkar, Chandan Kumar
    MICRO & NANO LETTERS, 2018, 13 (05) : 690 - 694
  • [22] Hydrothermal fabrication of two-dimensional indium oxide nanosheets for high-performance supercapacitors
    Subramanian, Balachandran
    Kumaravel, Jeeva Jothi
    Rajendran, Rajiev
    Duraisamy, Rajamanickam
    Rajaiah, Dhilip Kumar
    Sandhiran, Nagarani
    Govindasamy, Rajakumar
    Pandiaraj, Saravanan
    Rahaman, Mostafizur
    Chang, Jih-Hsing
    MATERIALS LETTERS, 2024, 358
  • [23] Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100-nm nMOSFETs
    Watling, JR
    Yang, LF
    Asenov, A
    Barker, JR
    Roy, S
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (01) : 103 - 108
  • [24] Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection
    Wendt, JR
    Warren, ME
    Sweatt, WC
    Bailey, CG
    Matzke, CM
    Arnold, DW
    Allerman, AA
    Carter, TR
    Asbill, RE
    Samora, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 3252 - 3255
  • [25] High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
    Jeong, Jae Kyeong
    Jeong, Jong Han
    Yang, Hui Won
    Park, Jin-Seong
    Mo, Yeon-Gon
    Kim, Hye Dong
    APPLIED PHYSICS LETTERS, 2007, 91 (11)
  • [26] High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing
    Yin, Yidi
    Lee, Kean Boon
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (04) : 533 - 536
  • [27] Optimised 0.25μm high performance retrograde well pMOS device for low-power applications
    Swe, TN
    Yeo, KS
    ELECTRONICS LETTERS, 1998, 34 (17) : 1702 - 1703
  • [28] Design and fabrication of indium tin oxide for high performance electro-optic modulators at the communication wavelength
    Zheng, Jun
    Huang, Yishu
    Chen, Kuan-An
    Liang, Sen
    Yuan, Jiangfeng
    Dai, Daoxin
    Ye, Hui
    OPTICAL MATERIALS, 2024, 148
  • [29] High performance indium oxide nanoribbon FETs: mitigating devices signal variation from batch fabrication
    Thuy Thi Thanh Pham
    Duy Phu Tran
    Thierry, Benjamin
    NANOSCALE ADVANCES, 2019, 1 (12): : 4870 - 4877
  • [30] A prenucleation strategy for ambient fabrication of perovskite solar cells with high device performance uniformity
    Kai Zhang
    Zheng Wang
    Gaopeng Wang
    Jian Wang
    Yu Li
    Wei Qian
    Shizhao Zheng
    Shuang Xiao
    Shihe Yang
    Nature Communications, 11
12345