Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication

被引：0
|
作者：
Ong, SY [1 ]
Chor, EF [1 ]
Leung, YK [1 ]
Lee, J [1 ]
Li, WS [1 ]
See, A [1 ]
Chan, L [1 ]
机构：
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117548, Singapore
来源：
DESIGN, MODELING AND SIMULATION IN MICROELECTRONICS | 2000年 / 4228卷
关键词：
indium; short channel effects; reverse short channel effects; steep retrograde channel profile;
D O I：
10.1117/12.405423
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Integration issues involved in incorporating Indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. Techniques are aimed at achieving a Steep Retrograde Channel Profile (SRCP) for effective Short Channel Effects (SCE) and Reverse Short Channel Effects (RSCE) control. One such technique is the inclusion of a Rapid Thermal Anneal step after NLDD implant (NLDD RTA). Alternative techniques such as Boron pocket removal and NLDD dose reduction are also studied.
引用
收藏
页码：270 / 278
页数：9
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