Barrier reliability of ALD TaN on sub-100 nm copper low-k interconnects

被引：0
|
作者：
Tokei, Z [1 ]
Gailledrat, T [1 ]
Li, YL [1 ]
Schuhmacher, J [1 ]
Mandrekar, T [1 ]
Guggilla, S [1 ]
Mebarki, B [1 ]
Maex, K [1 ]
机构：
[1] IMEC, B-3001 Heverlee, Belgium
来源：
ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004) | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RC-delay performance and barrier reliability of an ALD TaN + PVD flash barrier was compared to PVD only barriers. The integration of an ALD TaN + PVD flash barrier results in lower leakage current than PVD schemes both at room temperature and at elevated temperature. Time Dependent Dielectric Breakdown experiments showed that an ALD + PVD flash barrier integrated with an SiOC:H low-k material leads to an interconnect lifetime above 10 years.
引用
收藏
页码：801 / 805
页数：5
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